DDR Termination Regulator

___Power Management > DDR Termination Regulator_DDR Bus Termination Regulator (1.5A~3.0A)___

___Part No.___ ______ (勾選方式)	___Features___	___DDR___ ______ (勾選方式)	___VIN(V)___ ___Min___	___VIN(V)___ ___Max___	___VCNTL(V)___ ___Min___	___VCNTL(V)___ ___Max___	___VREF(Typ)___ ______ (勾選方式)	IOUT(A) (Range)	___Package___ ______ (勾選方式)
___UR5595___	___* Power regulating with driving and sinking capability___ ___* Low output voltage offset___ ___* No external resistors required___ ___* Low external component count___ ___* Linear topology___ ___* Low cost and easy to use___ ___* Thermal shutdown protection___	___DDR-I___ ___DDR-II___ ___SSTL-2___ ___SSTL-3___ ___HSTL Termination___	___2.2___	___5.5___	___-___	___-___	___0.9V___ ___1.25V___	1.5	___SOP-8___ ___HSOP-8___
___UR5596___	___* Support Both DDR-I (1.25 VTT) and DDR-II (0.9 VTT) Requirements___ ___* Capable of Sourcing and Sinking Current 1.5A/3A___ ___* Current-limiting Protection and Thermal Shutdown Protection___ ___* Integrated Power MOSFETs___ ___* Generates Termination Voltages for SSTL-2___ ___* High Accuracy Output Voltage at Full-Load___ ___* Adjustable output voltage by External Resistors___ ___* Minimum External Components___ ___* Shutdown for Standby or Suspend Mode Operation with___ ___High-impedance Output.___ ___TO-263-5___ ___SOP-8___ ___1 TO-252-5___ ___1___ ___*Pb-free plating product number: UR5515L___ ______	___DDR-I___ ___DDR-II___ ___SSTL-2___ ___SSTL-3___ ___HSTL Termination___	___2.2___	___5.5___	___-___	___-___	___0.9V___ ___1.25V___	1.5	___SOP-8___ ___HSOP-8___
___UR5515___	___* Support Both DDR-I (1.25 VTT) and DDR-II (0.9 VTT) Requirements___ ___* Capable of Sourcing and Sinking Current 1.5A/3A___ ___* Current-limiting Protection and Thermal Shutdown Protection___ ___* Integrated Power MOSFETs___ ___* Generates Termination Voltages for SSTL-2___ ___* High Accuracy Output Voltage at Full-Load___ ___* Adjustable output voltage by External Resistors___ ___* Minimum External Components___ ___* Shutdown for Standby or Suspend Mode Operation with___ ___High-impedance Output.___	___DDR-I___ ___DDR-II___ ___SSTL-2___ ___SSTL-3___	___1.6___	___6___	___-___	___6___	___0.9V___ ___1.25V___	1.5 3	___SOP-8___ ___TO-252-5___ ___TO263-5___
___UR5512___	___* DDR-I and DDR-II termination voltage applications___ ___* Driving and sinking current up to 2A___ ___* Low output voltage offset (within 20mV@±2A)___ ___* Adjustable output voltage by external resistors___ ___* Suspend to RAM (STR) functionality___ ___* Current limiting protection___ ___* Thermal protection___ ___* Cost-effective and easy to use___	___DDR-I___ ___DDR-II___ ___SSTL-2___ ___SSTL-3___	___1.6___	___5.5___	___3.1___	___6___	___0.85V___ ___1.75V___	2	___SOP-8___ ___HSOP-8___ ___TO-252-5___
___UR5513___	___* VCNTL Voltage Range: 2.9~5.5V___ ___* VIN Voltage Range: 1.1V~3.5V___ ___* Support Ceramic Capacitors___ ___* Power Good Indicator___ ___* DDRIII,Low Power DDRIII/DDRIV VTT Applications___ ___* 2A Source/Sink VTT output___ ___* 10mA Source/Sink Reference output___ ___* Soft-start Function___ ___* UVLO and OCP Protection___ ___* Thermal Shutdown Protection___	___DDRIII___ ___Low Power DDRIII___ ___DDRIV___	___1.1___	___3.5___	___2.9___	___5___	___-___	2	___MSOP-10___ ___DFN3030-10___
___UR6511___	___DDR1/ DDR2/DDR3/Low Power DDR3 termination voltage___ ___applications___ ___Sink and Source Current：2A___ ___Low output voltage offset within 20mV___ ___Adjustable output voltage by external resistors___ ___Integrated power MOS devices___ ___Suspend to RAM(STR) functionality___ ___Current Limiting Protection___ ___Thermal Shutdown Protection___ ___*Cost-effective and easy to use___	___DDR1___ ___DDR2___ ___DDR3___ ___Low Power DDR3___	___1.0___	___5.5___	___3___	___5.5___	___-___	2	___HSOP-8___ ___SOP-8___
___UR6512___	___* DDR1/ DDR2/DDR3 Termination Voltage Applications___ ___* Adjustable Output Voltage by External Resistors___ ___* Integrated Power MOS Devices___ ___* Suspend to RAM(STR) Functionality___ ___* Current Limiting Protection___ ___* Thermal Shutdown Protection___ ___* Cost-Effective and Easy to Use___	___DDR-I___ ___DDR-II___ ___DDR-III___	___1.5___	___2.5___	___3.3___	___5___	___0.75V___ ___1.25V___	2	___HSOP-8___
___UR6516B___	___* Ideal for DDR-I ,DDR-II___ ___* Output Voltage could Drop Down to 0.6V___ ___* Source and Sink up to 2A, Without an External Heat Sink___ ___* Integrated Power MOSFETs___ ___* Output Voltage Varies though Adjusting External Resistors___ ___* ICCQ is Lower than 500uA at VCCA___ ___* Thermal Shutdown Protection, Current Limit Protection, and Short___ ___Circuit Protection Circuits Included___ ___* Shutdown for Standby or Suspend Mode Operation___ ___* Requiring Minimum External Components___	___DDR-I___ ___DDR-II___ ___SSTL-2___ ___SSTL-3___	___1___	___6___	___3.15___	___6___	___0.75V___ ___0.9V___ ___1.25V___	2	___SOP-8___
___UR6515C___	___* DDR1/ DDR2/DDR3 termination voltage applications___ ___* Sink and Source Current___ ___2A Contious Current___ ___* Adjustable output voltage by external resistors___ ___* Integrated power MOS devices___ ___* Suspend to RAM(STR) functionality___ ___* Current Limiting Protection___ ___* Thermal Shutdown Protection___ ___* Cost-effective and easy to use___	___DDR-I___ ___DDR-II___ ___DDR-III___	___1.5___	___2.5___	___3.3___	___5___	___0.75V___ ___0.9V___ ___1.25V___	2	___HSOP-8___
___UR5516___	___* Provide bi-direction current___ ___- Sourcing or sinking current up to 3A___ ___* 1.25V/0.9V output for DDR I/II applications___ ___* Fast transient response___ ___* High output accuracy___ ___- ±20mv over load, VOUT offset and temperature___ ___* Adjustable output voltage by external resistors___ ___* Current-limit protection___ ___* On-chip thermal shutdown___ ___* Shutdown for standby or suspend mode___	___DDRI___ ___DDRII___	___1.2___	___3.5___	___3.1___	___6___	___0.85V___ ___1.75V___	3	___SOP-8___ ___HSOP-8___ ___TO-252-5___ ___TO-263-5___
___UR5516A___	___3.0A for DDR-I; DDR-II; SSTL-2 and SSTL-3 Bus Termination 1.25V and 0.9V Output___	___DDR-I___ ___DDR-II___ ___SSTL-2___ ___SSTL-3___	___1.2___	___3.5___	___3.1___	___6___	___0.85V___ ___1.75V___	3	___SOP-8___ ___HSOP-8___ ___TO-252-5___ ___TO-263-5___
___UR5516B___	___3.0A for DDR-I; DDR-II; SSTL-2 and SSTL-3 Bus Termination 1.25V and 0.9V Output___	___DDR-I___ ___DDR-II___ ___SSTL-2___ ___SSTL-3___	___1.2___	___3.5___	___3.1___	___6___	___0.85V___ ___1.75V___	3	___SOP-8___ ___HSOP-8___ ___TO-252-5___ ___TO-263-5___
___UR5516C___	___3.0A for DDR-I; DDR-II; SSTL-2 and SSTL-3 Bus Termination 1.25V and 0.9V Output___	___DDR-I___ ___DDR-II___ ___SSTL-2___ ___SSTL-3___	___1.2___	___3.5___	___3.1___	___6___	___0.85V___ ___1.75V___	3	___SOP-8___ ___HSOP-8___ ___TO-252-5___ ___TO-263-5___
___UR6515A___	___* DDR1/ DDR2 termination voltage applications___ ___* Low output voltage offset within 20mV___ ___* Source and sink 3A peak current___ ___* Adjustable output voltage by external resistors___ ___* Integrated power MOS devices___ ___* Suspend to RAM(STR) functionality___ ___* Current Limiting Protection___ ___* Thermal Shutdown Protection___ ___* Cost-effective and easy to use___	___DDR-I___ ___DDR-II___	___1.5___	___2.5___	___3___	___5___	___0.75V___ ___0.9V___ ___1.25V___	3	___TO-252-5___ ___TO-263-5___
___UR6515D___	___* DDR1/ DDR2/DDR3 termination voltage applications___ ___* Sink and Source Current___ ___-2A Continues Current___ ___-Peak 3A for DDR1&DDR2___ ___-Peak 2.5A for DDR3___ ___* Low output voltage offset within 20mV___ ___* Source and sink 3A peak current___ ___* Adjustable output voltage by external resistors___ ___* Integrated power MOS devices___ ___* Suspend to RAM(STR) functionality___ ___* Current Limiting Protection___ ___* Thermal Shutdown Protection___	___DDR-I___ ___DDR-II___ ___DDR-III___	___1.5___	___2.5___	___3.3___	___5___	___0.75V___ ___0.9V___ ___1.25V___	3	___HSOP-8___
___UR5517___	___* Input Voltage Range:3~5.5V___ ___* VLDOIN Voltage Range:1.2V~3.6V___ ___* DDR1/2/3 Termination Voltage Applications___ ___* Sourcing and Sinking Current up to 3A___ ___* ±20mV Accuracy for VTT and VTTREF___ ___* 10mA Buffered Reference(VTTREF)___ ___* Supports High-Z in S3(STR) and Soft-off in S5(Shutdown)___ ___* Integrated Divider Tracks 1/2 VDDQSNS for Both VTT & VTTREF___ ___* Built-In Soft-Start___ ___* Current Limiting Protection___ ___* Thermal Shutdown Protection___	___DDR-I___ ___DDR-II___ ___DDR-III___	___3___	___5.5___	___1.3___	___3.6___	___0.75V___ ___0.9V___ ___1.25V___	3	___MSOP-10___ ___HMSOP-8___ ___MSOP-8___ ___HMSOP-10___ ___DFN3030-10___
___UR6517___	___DDR1/ DDR2/DDR3/DDR4 termination voltage applications___ ___Sink and Source Current___ ___DDR2 1.8A Sink/Source @ VIN=1.8V___ ___DDR3 1.5A Sink/Source @ VIN=1.5V___ ___LPDDR3 1.2A Sink/Source @ VIN=1.35V___ ___DDR4 1.2A Sink/Source @ VIN=1.2V___ ___Low output voltage offset within 20mV___ ___Adjustable output voltage by external resistors___ ___Integrated power MOS devices___ ___Suspend to RAM(STR) functionality___ ___Current Limiting Protection___ ___Thermal Shutdown Protection___ ___*Cost-effective and easy to use___	___DDR-I___ ___DDR-II___ ___DDR-III___ ___DDR-IV___	___1___	___5.5___	___3.3___	___5___	___0.6V~0.9V___	1.8	___HSOP-8___

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